BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
|Published (Last):||2 August 2011|
|PDF File Size:||12.37 Mb|
|ePub File Size:||19.85 Mb|
|Price:||Free* [*Free Regsitration Required]|
Silicon diffused power transistor online from datashedt, view and download budf pdf datasheet, diodes, rectifiers specifications. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor.
HTTP This page has been moved
Forward bias safe operating area. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
SOT; The seating plane is electrically isolated from all terminals. Buaf datasheet, equivalent, cross reference search. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
This data sheet contains final product specifications.
BU 2508DF PHI
Typical collector storage and fall time. High collectorbase voltagevcbov high speed switching. July 1 Rev 1. July 5 Rev 1. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.
July 2 Rev 1. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Typical DC current gain.
Exposure to limiting values for extended periods may affect device reliability. C I Region of permissible DC operation.
July 7 Rev 1. Buaf transistor equivalent substitute crossreference search. II Extension for repetitive pulse operation. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Silicon diffused power transistor buaf datasheet catalog.
No liability will be accepted by the publisher for any consequence of its use. This data sheet contains target or goal specifications for product development.
BU2508DF Silicon Diffused Power Transistor
C 1 Turn-off current. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Budf philips semiconductors, budf datasheet. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Typical base-emitter saturation voltage.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Refer to mounting instructions for F-pack envelopes. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.
Stress above one or more of the limiting values may cause permanent damage to the device.
BUDF datasheet(1/7 Pages) PHILIPS | Silicon Diffused Power Transistor
Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope. Budf transistor equivalent substitute crossreference search. July 6 Rev 1.
Typical collector-emitter saturation voltage. Application information Where application information is given, it is advisory and does not form part of the specification. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.